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Increase Ga vacancy-related defects by reducing Sn in Sn-doped β-Ga2O3
https://doi.org/10.57760/sciencedb.07733
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Doping concentration, crystal quality, transmittance, fluorescence spectrum and Raman analysis of Sn-doped GaO after oxygen annealing
CSTR:
31253.11.sciencedb.07733
Bu Yuzhe
Shanghai Institute of Optics and Fine Mechanics
DOI registered
March 16, 2023
via DataCite
Version V1 of Dataset published 2023 in
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Chinese
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23 views reported since publication in 2023.